Product Brief 1200V CoolSiC N SiC JFET0 pages
Product Brief
Features
1200V CoolSiC™ & Direct Drive Technology
The green revolution is taking place
Complete solution offer consisting of JFET,
p-channel MOSFET and dedicated driver
No reverse recovery charge thanks to
unipolar MOSFET-like characteristics
Ohmic output characteristics
Monolithically integrated ultrafast
Body Diode
Technology, represents Infineon’s leading edge solution to bring actual designs towards new and so
Utmost efficiency levels reachable
far unattainable efficiency levels. The new CoolSiC™ consistently reduces the switching losses with
No gate oxides in the structure
respect to the available IGBT based silicon devices and even the conduction losses when its ohmic
10 years manufacturing of SiC diodes
The revolutionary 1200V CoolSiC™ family, in combination with the proposed Direct Drive
characteristics are fully exploited. Utmost efficiency at highest power density levels can be reached
also thanks to Infineon CoolSiC™ monolithically integrated body diode, showing a switching
Benefits
Simplifies design-in and enables
product to be operated as normally
off device
Extremely low and temperature
independent switching losses
Reduced conduction losses with
respect to IGBT mainly at partial and
at light load
Low power losses in reverse operation
in combination with synchronous
rectification, reduced footprint
Enables either reduced cooling
requirements, the adoption of higher
operating frequencies resulting in
system costs savings by shrinking
passive components or reaching a
higher power density design in
same footprint
Utmost reliability
performance comparable with that of an external SiC Schottky barrier diode. The Infineon CoolSiC™,
High quality knowhow and capacity in
SiC devices
with its ultrafast body diode and dedicated Driver IC, represents the best solution for solar, UPS and
industrial drives applications by combining best performance, reliability, safety and ease of use.
Direct measurements in a Three-phase string Inverter (sunny tripower by SMA Solar Technology AG)
Pout max 17kW fsw=16kHz 1)
99.0
98.5
Eciency [%]
98.0
97.5
97.0
96.5
96.0
Si IGBT
SiC JFET
95.5
95.0
94.5
94.0
5
15
25
35
45
55
65
75
85
95
Measured system
efficiencies at optimum
operation point
Output Power [% nominal]
Measured system efficiencies
at several DC link voltages
(400V up to 800V)
1)
G. Deboy, H. Ludwig, R. Mallwitz, R. Rupp, „New SiC JFET” with Integrated Body Diode Boosts Performance of Photovoltaic Systems”
Proc. PCIM, May 2011
www.infineon.com/CoolSiC
Applications
Solar
UPS
Industrial Drives
"