Silicon Switching Diode0 pages
Silicon Switching Diode For high-speed switching applications Օ Pb-free (RoHS compliant) package
nn1)
nnQualified according AEC Q101 BAL74BAR74
nnType Package Configuration Marking BAL74BAR74 SOT23
SOT23 single
single JCs
JBs
Maximum Ratings at T >
A = 25հC, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V >
R 50 V Peak reverse voltage V >
RM 50 Forward current I >
F 250 mA Peak forward current I >
FM - Surge forward current, t = 1 s I >
FS 4.5 A Non-repetitive peak surge forward current I >
FSM - Total power dissipation P >
tot 370 mW T >
S բɤ 54C Junction temperature T >
j 150 аC Storage temperature T >
stg -65 ... 150 >
Thermal ResistanceParameter Symbol Value Unit Junction - soldering point
nn2)
nn, BAL74, BAR74 R
nnthJS
nn≤ 260 K/W
nn1 Pb-containing package may be available upon special request 2 For calculation of R thJA please refer to Application Note Thermal Resistance
nn