MBN500H65E20 pages

IGBT MODULE

Spec.No.IGBT-SP-09025 R5

P1

MBN500H65E2

Silicon N-channel IGBT 6500V E2 version

FEATURES
∗ Low driving power due to low input capacitance MOS gate.
∗ Low noise due to ultra soft fast recovery diode.
∗ High reliability, high durability module.
∗ High thermal fatigue durability.
(delta Tc=70°C, N>30,000cycles)
∗ Isolated head sink (terminal to base).

o

ABSOLUTE MAXIMUM RATINGS (Tc=25 C )
Item

o

Collector Emitter Voltage
Gate Emitter Voltage

Tj=125 C
o
Tj=25 C
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Tj=-40 C

Symbol
VCES

VGES
IC
Collector Current
ICp
IF
Forward Current
IFM
Junction Temperature
Tj
Storage Temperature
Tstg
Isolation Voltage
VISO
Terminals (M4/M8)
Screw Torque
Mounting (M6)
Notes: (1) Recommended Value 1.8±0.2/9±1N·m
DC
1ms
DC
1ms

Unit

MBN500H65E2

6,500
6,500
6,000
V
±20
o
500 (Tc=80 C)
A
1,000
500
A
1,000
o
C
-40 ~ +125
o
C
-50 ~ +125
VRMS
10,200 (AC 1 minute)
2/10
(1)
N·m
6
(2)
(2) Recommended Value 5.5±0.5N·m
V

ELECTRICAL CHARACTERISTICS
Item

Symbol

Unit

Collector Emitter Cut-Off Current

I CES

mA

Gate Emitter Leakage Current

IGES

nA

Collector Emitter Saturation Voltage

VCE(sat)

V

Gate Emitter Threshold Voltage
Input Capacitance
Internal Gate Resistance
Rise Time
Turn On Time
Switching Times
Fall Time
Turn Off Time

VGE(TO)
Cies
Rge
tr
ton
tf
toff

V
nF
Ω

VFM

V

trr

µs

Peak Forward Voltage Drop
Reverse Recovery Time

µs

Min.

Typ.

Max.

-

0.8

1.6

-500
3.4
5.8
2.2
2.7
2.2
4.5
3.5

17
3.2
4.3
6.3
87
1.1
3.2
3.9
3.1
6.4
3.6
3.9

17
67
+500
5.2
6.8
4.8
5.9
4.7
9.6
4.4

Test Conditions
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VCE=6,500V, VGE=0V, Tj=25 C
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VCE=6,500V, VGE=0V, Tj=125 C
o
VGE=±20V, VCE=0V, Tj=25 C
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IC=500A, VGE=15V, Tj=25 C
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IC=500A, VGE=15V, Tj=125 C
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VCE=10V, IC=500mA, Tj=25 C
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VCE=10V,VGE=0V, f=100kHz, Tj=25 C
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VCE=10V,VGE=0V, f=100kHz, Tj=25 C
VCC=3,600V, Ic=500A
Ls=210nH
(3)
RG=12Ω
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VGE=+/-15V, Tj=125 C
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IF=500A, VGE=0V, Tj=25 C
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IF=500A, VGE=0V, Tj=125 C
Vcc=3,600V, IF=500A, Ls=210nH
o
Tj=125 C

Eon(10%)
3.3
4.3
J/p
Eon(full)
3.7
VCC=3600V, Ic= IF=500A, Ls=210nH
Eoff(10%)
2.6
3.4
Turn Off Loss
J/ p
RG= 12Ω
(3)
Eoff(full)
2.8
o
VGE=+/-15V, Tj=125 C
Err(10%)
1.4
1.8
Reverse Recovery Loss
J/ p
Err(full)
1.5
Notes:(3) RG value is the test condition’s value for evaluation of the switching times, not recommended value.
Please, determine the suitable RG value after the measurement of switching
waveforms (overshoot voltage, etc.) with appliance mounted.
* Please contact our representatives at order.
* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.
Turn On Loss