ISL70219ASEH 40V Radiation Hardened and SET Enhanced Precision Low Power Operational Amplifier0 pages

DATASHEET

40V Radiation Hardened and SET Enhanced Precision
Low Power Operational Amplifier
ISL70219ASEH, ISL70419ASEH

Features

The ISL70219ASEH and ISL70419ASEH are a family of very high
precision amplifiers featuring the perfect combination of low
noise vs power consumption. Low offset voltage, low IBIAS current
and low temperature drift making them the ideal choice for
applications requiring both high DC accuracy and AC
performance. The combination of high precision, low noise, low
power and small footprint provides the user with outstanding
value and flexibility relative to similar competitive parts.

• Electrically screened to DLA SMD# 5962-14226

Applications for these amplifiers include precision active
filters, medical and analytical instrumentation, precision
power supply controls and industrial controls.
The ISL70219ASEH is offered in a 10 lead hermetic ceramic
flatpack. The ISL70419ASEH is offered in a 14 lead hermetic
ceramic flatpack package. The devices are packaged in
industry standard pin configurations and operate across the
extended temperature range from -55°C to +125°C.

Related Literature
• UG007, “ISL70219ASEH Evaluation Board User Guide”
• TR002, “Single Event Effects (SEE) Testing of the
ISL70219ASEH Dual Operational Amplifier”
• ISL70219ASEH SMD 5962-14226

• Low input offset voltage. . . . . . . . . . . . . . . . . . . .±110µV, max
• Superb offset temperature coefficient. . . . . . . . 1µV/°C, max
• Input bias current . . . . . . . . . . . . . . . . . . . . . . . . . .±15nA, max
• Input bias current TC . . . . . . . . . . . . . . . . . . . . ±5pA/°C, max
• Low current consumption . . . . . . . . . . . . . . . . . . . . . . . 440µA
• Voltage noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8nV/√Hz
• Wide supply range . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 36V
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
• Radiation environment
- SEB LETTH (VS = ±18V) . . . . . . . . . . . . . .86.4 MeV•cm2/mg
- SET recovery time . . . . . . . . . . . ≤10µs at 60 MeV•cm2/m
- SEL immune (SOI process)
- Total dose HDR (50 to 300rad(Si)/s). . . . . . . . 300krad(Si)
- Total dose LDR (10mrad(Si)/s) . . . . . . . . . . . 100krad(Si) *
* Product capability established by initial characterization. The
EH version is acceptance tested on a wafer-by-wafer basis to
50krad(Si) at low dose rate.

Applications

• ISL70219ASEH Radiation Test Report

• Precision instrumentation
• Spectral analysis equipment
• Active filter blocks, thermocouples and RTD reference
buffers
• Data acquisition and power supply control

16

C1

14

V+
R1
1.84k

ISL70X19ASEH

R2

OUTPUT

4.93k

VIN

+

3.3nF

SET DURATION (µs)

8.2nF

12
10
8
6
4
2

C2

V-

0

-8

-6

-4

-2

0

2

4

SET EXTREME DEVIATION (V)

FIGURE 1. TYPICAL APPLICATION: SALLEN-KEY LOW PASS FILTER
(FC = 10kHz)
October 27, 2014
FN8459.0

1

FIGURE 2. SET DEVIATION vs DURATION FOR LET = 60
MeV•cm2/mg (VS = ±18V)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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