Pressure Sensor - Model MS7201-A20 pages

DA7201-A2_003.doc April 24, 2009 1/5
000072011240
ECN 1209
MS7201-A2 PRESSURE SENSOR DIE (0-1 BAR)
FOR HARSH ENVIRONMENT
• 0 to 100 kPa range (1 bar or 14.5 PSI)
• Uncompensated absolute pressure sensor die
• Piezoresistive silicon micromachined sensor
• Hermetic sensor, temperature up to 150°C
• Pads on one side
• RoHS-compatible & Pb-free1
DESCRIPTION
The MS7201-A2 is an absolute silicon micro-machined pressure sensor for harsh environment, with the pads on
one side. A vacuum reference cavity is sealed on top of the sensitive silicon membrane by the anodic bonding of
a glass cap. The pressure, applied on the backside, is converted in electrical signal by piezo-resistors implanted
in the silicon membrane. To improve the sensor stability, a drilled glass is bonded on the backside. As the
pressure port consists of glass and silicon, both stable in most of the chemicals, the MS7201-A2 is suitable for
media-resistive applications.
FEATURES
• Media resistive pressure sensor die • Linearity 0.15% (typical)
• Typical output Span 110mV @ 5 V • Die size 1.35 x 1.79 mm2
• Temperature range -40°…+150°C • Low cost, high reliability & stability
APPLICATION
• Harsh environments
• Absolute pressure sensor systems
ELECTRICAL CONNECTIONS
1 The European RoHS directive 2002/95/EC (Restriction of the use of certain Hazardous Substances in electrical and electronic equipment)
bans the use of lead, mercury, cadmium, hexavalent chromium and polybrominated biphenyls (PBB) or polybrominated diphenyl ethers
(PBDE).
Pin Symbol Description
1 EPI / I diode (-) Epi contact / Cathode of diode (n)
2 Vs+ / I diode (+) Supply voltage / Anode of diode (p)
3 Out+ Positive output*
4 GND Ground
5 Out- Negative output*
*Positive output for pressure applied backside