LN60A01 600V, Triple N-Channel MOSFET with Common Gate Control0 pages

LN60A01 600V, Triple N-Channel MOSFET with Common Gate Control The Future of Analog IC Technology- DESCRIPTION The LN60A01 is a three channel, 600V N-Channel, enhancement mode power FET manufactured in MPS's proprietary, high-voltage DMOS technology. This advanced technology has been especially tailored to minimize the on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. This device is well suited for high efficiency switched mode power supplies and active power factor correction. The LN60A01 is available in PDIP8 and SOIC8 package. FEATURES  600V Breakdown Voltage Օ Three N-Channel MOSFETs  One Gate control to All Three FETs Օ Rds(on)=200Q at Vgs=10V  Switching Current>0.1A Օ Fast Switching APPLICATIONS  High Efficiency AC/DC Adaptor Օ Offline Switching Power Supply  Active Power Factor Correction 'MIPS" and 'The Future of Analog IC Technology" are Registered Trademarks of Monolithic Power Systems, Inc. TYPICAL APPLICATION 400V 0 400V 400V 0 :r1 :R2 "470k :R3 -470k Gate □ VCC1 □ VCC2 □ VCC3 LN60A01EP Rev. 0.91 1/15/2010 www.MonolithicPower.com MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited. © 2010 MPS. All Rights Reserved. 1