APX3000 pages
2015
PSHdSOHIG Plasma Processing Equipment
catalog
Dry Etcher
Model ID M M M ^ ^MdM
3AA
I The APX 300 contributes to high-level productivity in the etching process
thanks to high speed LED film processing
I The LED substrate surface can be etched to diverse shapes such as
trapezoidal and conical form
> Housing the equipment in one box contributes to increased area productivity
Model ID | APX300 |
Model No. | NM-EFE3AA |
Plasma source | ICP Plasma |
Process gas | 4 Lines (standard) (Maximum 6 Lines: Chlorinated Gas, Fluoride Gas, Ar, O2, He, etc.) |
Wafer size *1 | <t> 100 mm wafer with orientation flat (standard) |
Dimensions (ran) | W1 350 x D 2 230 x H 2 000 (Does not include touch panels, operation section and signal tower) |
Mass | 2100 kg (differs depending on machine configuration) |
Power source | 3-phaseAC200/208/220/230 / 240 ±10V, 50/60Hz,21.00kVA |
Pneumatic source | 0.5 MPa to 0.7 MPa, 250 L/min (A.N.R.) |
N2 Source | 0.1 MPa to 0.2 MPa, 50 L/min (A.N.R.) |
"1 : For other size wafers, please contact us
*2 : 2 line 3-phase power source, and this shows the total
"