PSX8000 pages

Model ID

PSX800

Model No.

NM-EFP2A

Plasma Source

ICP plasma

Process Gas

Maximum of five systems (e.g. Fluoride Gas, 02, He)

Applicable Wafer

0 200 mm wafer with protective tape, 0 300 mm wafer with protective tape,

0 300 mm wafer with dicing ring

Wafer Thickness

Min. of 25 pm - Max. of 750 urn

Machine Dimensions

W750mmxD1 990mm,H1 950

Weight

2 000 kg (machine only)

Power Source

Single phase AC 200 V, 5 k VA and three-phase AC 200 V, 5 k VA

Pneumatic Source

0.49 MPa or larger, 6.5 L / min [A.N.R.]

N2 Source

0.15 MPa to 0.2 Mpa, 20 L/min