Photodiodes from 1000 nm to 2600 nm0 pages

1000 - 2600 nm

Photodiodes
from 1000 nm to
2600 nm

data sheet describing nanoplus InGaAsSb
photodiodes

nanoplus InGaAsSb photodiodes
Our InGaAsSb photodiodes are applicable
for light detection in the wavelength
range from 1000 nm to 2600 nm and beyond on request.
With their large diameter (1 - 3 mm), they
are specially designed for environmental
measurements or other analytical instruments.

application areas

key features
wavelength range from 1000 nm to 2600 nm
photosensitive area 1 - 3 mm in diameter
TO5 package uncooled
TO5 package with TEC and NCT
general ratings (20 °C)
for 1.5 mm diameter photodiode

high performance gas sensing
process and environmental control
analytical instruments
OEM-products of all kind

symbol

unit

typ

max

spectral response range

l

nm

1000 to 2600

-

peak sensitivity wavelength

lp

nm

1880

-

responsivity (@ 1880 nm)

Rp

A/W

0.6

0.9

reverse voltage

VR

V

-

2

dark current (@ VR = 1 V)

ID

mA

1.0

1.9

shunt resistance (@ VR = 50 mV)

Rsh

kΩ

0.6

0.7

photodiode options
TO5 with or without TEC and NTC

custom active area diameters upon request
device protected by
US patent 6.671.306
US patent 6.846.689
EU patent EP0984535

custom active area designs like elliptical, rectangular or segmented upon request

nanoplus
Nanosystems and Technologies GmbH
Oberer Kirschberg 4
D-97218 Gerbrunn

phone: +49 (0) 931 90827-0
fax: +49 (0) 931 90827-19
email: sales@nanoplus.com
internet: www.nanoplus.com

© copyright nanoplus GmbH 2013. All rights reserved.
nanoplus GmbH reserves the right to modify these specifications
at any time without notice.

Rev. PD10002600.05

further packaging options upon request