2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET0 pages

2N7002BKS
60 V, 300 mA dual N-channel Trench MOSFET
Rev. 2 — 23 September 2010
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small
SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tamb = 25 °C
-
-
60
V
VGS
gate-source voltage
Tamb = 25 °C
-
-
±20
V
ID
drain current
Tamb = 25 °C;
VGS = 10 V
-
-
300
mA
RDSon
drain-source on-state
resistance
Tj = 25 °C;
VGS = 10 V;
ID = 500 mA
-
1
1.6
Ω
[1]
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.