High reliability PE93540 pages

Product Specification

PE9354
SPDT High Power
UltraCMOS™ RF Switch
Rad hard for Space Applications

Product Description
The PE9354 SPDT High Power UltraCMOS™ RF Switch is
designed to cover a broad range of applications from near DC
to 3000 MHz. This single-supply reflective switch integrates onboard CMOS control logic driven by a simple, single-pin CMOS
and TTL compatible control input. Using a nominal +3-volt
power supply, a typical input 1 dB compression point of +31
dBm can be achieved. The PE9354 also exhibits input-output
isolation of better than 30 dB at 2000 MHz and is offered in a
small 8-lead ceramic SOIC package.
The PE9354 is optimized for commercial space applications.
Single Event Latch up (SEL) is physically impossible and
Single Event Upset (SEU) is better than 10-9 errors per bit/day.
Fabricated in Peregrine’s UltraCMOS™ technology, the
PE9354 offers excellent RF performance and intrinsic radiation
tolerance.
Figure 1. Functional Schematic Diagram

Features
• Single 3-volt power supply
• Low insertion loss: 0.55 dB at 2000 MHz
• High isolation of 30 dB at 2000 MHz
• Typical input 1 dB compression point of

+31 dBm
• 100 Krad total dose
• Single-pin CMOS or TTL logic control
• Low cost

Figure 2. Package Type
8-lead CSOIC

RFC

RF1

RF2

CMOS
Control
Driver

CTRL

Table 1. A/C Electrical Specifications -55 °C to +125 °C, VDD = 3.0 V (ZS = ZL = 50 Ω)
Parameter
Operation Frequency

Conditions

1

Minimum

Typical

MHz

0.80

dB

Insertion Loss

2000 MHz

Isolation – RFC to RF1/RF2

2000 MHz

28

32

dB

Isolation – RF1 to RF2

2000 MHz

24

28

dB

22

dB

31

dBm

2

2000 MHz

Input 1 dB Compression

2000 MHz

0.55

Units

3000

DC

Maximum

Return Loss

28

Note: 1. Device linearity will begin to degrade below 10 MHz.
Note: 2. Return loss not measured in production due to equipment limitations

Document No. 70-0099-02 │ www.psemi.com

©2004-2006 Peregrine Semiconductor Corp. All rights reserved.
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