PYROELECTRIC DETECTORS0 pages

PY-FTIR-02
Please note: the information contained in this document is subject to change without further notification. Pyreos reserves the right
to alter the performance and any resulting specification. Pyreos may choose to withdraw products or not to supply engineering
samples as a commercial product. No responsibility is accepted for any consequential loss incurred. Pyreos Ltd, SMC, West Mains
Road, Edinburgh EH9 3JF, UK. Tel:+441316507009, www.pyreos.com; © Copyright Pyreos Ltd 2010 Page 1 of 2
PYROELECTRIC DETECTORS
Introduction
Pyreos is pleased to present our unique thin film pyroelectric single element detector in
TO39 package. The detector is ideal for use in FTIR applications due to its fast response,
and flat, stable responsivity up to ~ 1 KHz frequency. The rugged solid state nature of our
pyroelectric sensor chip gives rise to exceptional thermal and chemical stability.
Unlike other FTIR materials, the Pyreos thin film pyroelectric sensor offers improved
performance when miniaturized, which is harnessed by combining with a focusing ZnSe lens
in the component package, to offer large IR beam capture and exceptional FTIR
performance.
General Sensor Information
Frequency Characteristics
Max. Voltage (+V) 5.0V 2
Min. Voltage (+V) 2.7V 2
Recommended Offset V (+V / 2) 2
Offset V max (+V) - 0.1V 2
Offset V min 0.1V 2
2 With reference to Gnd
Package TO39
ZnSe lens 3.50 mm ø
Operating Temperature -20 to +70 C
Storage Temperature -20 to +110 C
Aperture 3.50 mm ø
Element size 500 x 500 ìm
Microphonics S vib~1 ìV/ g (10Hz)
Thermal Time Constant ~10 ms
Electrical Time Constant <5 ms
Op amp with 500 M Ohm feedback resistor
Responsivity1 ~10,000 V/W
D* 1 3 x 108 cmHz/ W
Noise 1 ~10 uVHz
1 100Hz with focusing ZnSe lens in place