power MOSFETs XP161A11A1PR0 pages

XP161A11A1PR-G

ETR1122_003

Power MOSFET

■GENERAL DESCRIPTION
The XP161A11A1PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible.

■APPLICATIONS

■FEATURES

●Notebook PCs

Low On-State Resistance : Rds(on)=0.065Ω@ Vgs=10V
: Rds(on)=0.105Ω@ Vgs=4.5V

●Cellular and portable phones
●On-board power supplies

Ultra High-Speed Switching
Gate Protect Diode Built-in

Driving Voltage
: 4.5V
N-Channel Power MOSFET
DMOS Structure
Small Package
: SOT-89
Environmentally Friendly : EU RoHS Compliant, Pb Free

●Li-ion battery systems

■PIN CONFIGURATION/
MARKING

■PRODUCT NAME

1

x

1

1

G : Gate
S : Source
D : Drain

* x represents production lot number.

■EQUIVALENT CIRCUIT

PRODUCTS

PACKAGE

ORDER UNIT

XP161A11A1PR

SOT-89

1,000/Reel

SOT-89

1,000/Reel

XP161A11A1PR-G
(*)

(*)

The “-G” suffix denotes Halogen and Antimony free as well as
being fully RoHS compliant.

■ABSOLUTE MAXIMUM RATINGS
Ta = 25℃
PARAMETER

SYMBOL RATINGS UNITS

Drain - Source Voltage

Vdss

30

V

Gate - Source Voltage

Vgss

±20

V

Drain Current (DC)

Id

4

A

Drain Current (Pulse)

Idp

16

A

Reverse Drain Current

Idr

4

A

Channel Power Dissipation *

Pd

2

W

Channel Temperature

Tch

150

℃

Storage Temperature

Tstg

-55~150

℃

* When implemented on a ceramic PCB

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