power MOSFETs XP151A12A2MR0 pages
XP151A12A2MR-G
ETR1118_003
Power MOSFET
■GENERAL DESCRIPTION
The XP151A12A2MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching
characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible.
■FEATURES
■APPLICATIONS
●Notebook PCs
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems
■PIN CONFIGURATION/
MARKING
Low On-State Resistance : Rds(on) = 0.1Ω@ Vgs = 4.5V
: Rds(on) = 0.16Ω@ Vgs = 2.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
: 2.5V
N-Channel Power MOSFET
DMOS Structure
Small Package
: SOT-23
Environmentally Friendly : EU RoHS Compliant, Pb Free
■PRODUCT NAMES
PRODUCTS
1 1 2 x
SSource
XP151A12A2MR-G
(*)
(*)
ORDER UNIT
SOT-23
XP151A12A2MR
GGate
DDrain
PACKAGE
3,000/Reel
SOT-23
3,000/Reel
The “-G” suffix denotes Halogen and Antimony free as well as
being fully RoHS compliant.
* x represents production lot number.
■EQUIVALENT CIRCUIT
■ABSOLUTE MAXIMUM RATINGS
Ta = 25℃
PARAMETER
SYMBOL RATINGS UNITS
Drain - Source Voltage
Vdss
20
V
Gate - Source Voltage
Vgss
±12
V
Drain Current (DC)
Id
1
A
Drain Current (Pulse)
Idp
4
A
Reverse Drain Current
Idr
1
A
Channel Power Dissipation *
Pd
0.5
W
Channel Temperature
Tch
150
℃
Storage Temperature
Tstg
-55~150
℃
* When implemented on a ceramic PCB
1/5
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