FGPF4536 360V, PDP IGBT0 pages

©2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FGPF4536 Rev. A
FGPF4536 360V, PDP Trench IGBT
August 2010
Absolute Maximum Ratings
Thermal Characteristics
Notes:
(1) Half Sine Wave, D < 0.01, pluse width < 5ìsec
* Ic_pluse limited by max Tj
Symbol Description Ratings Units
VCES Collector to Emitter Voltage 360 V
VGES Gate to Emitter Voltage ± 30 V
IC pulse(1)* Pulsed Collector Current @ TC = 25oC 220 A
PD
Maximum Power Dissipation @ TC = 25oC 28.4 W
Maximum Power Dissipation @ TC = 100oC 11.4 W
TJ Operating Junction Temperature -55 to +150 oC
Tstg Storage Temperature Range -55 to +150 oC
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 oC
Symbol Parameter Typ. Max. Units
RèJC(IGBT) Thermal Resistance, Junction to Case - 4.4 oC/W
RèJA Thermal Resistance, Junction to Ambient - 62.5 oC/W
TO-220F
G C E (Retractable)
FGPF4536
360V, PDP IGBT
Features
• High current capability
• Low saturation voltage: VCE (sat) =1.59 V @ IC = 50 A
• High input impedance
• Fast switching
• RoHS compliant
Application
• PDP System
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP
applications where low conduction and switching losses are
essential.