DSS 6500 pages

PHOTOVOLTAIC

DSS™650

Multicrystalline Growth System
Increased Throughput Improves Productivity by 44 Percent
The GT Advanced Technologies DSS™650 is the newest member of the
industry’s leading family of DSS crystallization systems. The DSS650 sets a
new standard for cost- eective, crystalline ingot growth and helps customers
achieve lower cost of ownership. The DSS650 can grow signicantly larger
silicon ingots averaging 625 kg — resulting in 44 percent more output, while
reducing consumable costs and optimizing the wafer- slicing process.
GT Advanced Technologies is committed to delivering sustained value to
customers and the DSS650 delivers on this promise. Customers who operate
DSS™450 and DSS™450HP systems can easily upgrade their furnaces to take
advantage of the improved throughput of the DSS650.

GT Advanced Technologies’
unmatched expertise in crystal

Key Benefits:

growth processes, mechanical

• Furnace Output > 9MW per year (assumes 16.5% eciency from
156 mm cell lines)
• Ingot size: 84 x 84 cm2
• Ingot weight: Typical 625 kg (590 kg to 650 kg)
• Mass ingot yield (MIY) ≥70 percent
• Cycle time ≤65 hours
• Bottom-load process chamber: adds operating convenience
• Automated and guaranteed process
• Patented crucible-coating process
• Lowest cost of ownership
• >3,000 systems of experience ensures trouble-free production ramp

design, vacuum and high-pressure
chambers, control system design,
and crystal growth modeling,
provides customers with a
technologically advanced system.

POLYSILICON

Growth Begins Here

PHOTOVOLTAIC

SAPPHIRE