DSS 8500 pages

PHOTOVOLTAIC

DSS™850

Crystalline Growth System
Increased Throughput Improves Productivity by 65 Percent
The GT Advanced Technologies DSS™ 850 is the newest member of the
industry’s leading family of DSS crystallization systems. The DSS850 sets a
new standard for cost-effective, precisely controlled crystalline ingot growth
and helps customers achieve lower cost of ownership and better ingot quality.
The DSS850 can grow significantly larger silicon ingots averaging 800 kg
resulting in 65 percent more output, while reducing consumable costs and
optimizing the wafer- slicing process. The design of the DSS850 will support
MonoCast™ crystal growth that offers a path to higher quality material.
GT Advanced Technologies is committed to delivering sustained value to
customers and the DSS850 delivers on this promise. Customers who operate
DSS™450, DSS™450HP and DSS™650 systems can easily upgrade their
furnaces to take advantage of the improved throughput of the DSS850.

Key Benefits:
•tFurnace Output >11.5 MW per year (assumes 17% efficiency from
t 156 mm cell lines)
•tIngot size: 100 x 100 cm2
•tIngot weight: Typical 800 kg
•tMass ingot yield (MIY) ≥73 percent
•tCycle time ≤76 hours
•tBottom-load process chamber: adds operating convenience
•tAutomated and guaranteed process
•tPatented crucible-coating process
•tLowest cost of ownership
•t>3,200 systems of experience ensures trouble-free production ramp

Growth Begins Here™

GT Advanced Technologies’
unmatched expertise in crystal
growth processes, mechanical
design, vacuum and high-pressure
chambers, control system design,
and crystal growth modeling,
provides customers with a
technologically advanced system.