Product Brief 1200V CoolSiC N SiC JFET0 pages

Product Brief

Features

1200V CoolSiC™ & Direct Drive Technology

The green revolution is taking place

Complete solution offer consisting of JFET,
p-channel MOSFET and dedicated driver

No reverse recovery charge thanks to
unipolar MOSFET-like characteristics

Ohmic output characteristics

Monolithically integrated ultrafast
Body Diode

Technology, represents Infineon’s leading edge solution to bring actual designs towards new and so

Utmost efficiency levels reachable

far unattainable efficiency levels. The new CoolSiC™ consistently reduces the switching losses with

No gate oxides in the structure

respect to the available IGBT based silicon devices and even the conduction losses when its ohmic

10 years manufacturing of SiC diodes

The revolutionary 1200V CoolSiC™ family, in combination with the proposed Direct Drive

characteristics are fully exploited. Utmost efficiency at highest power density levels can be reached
also thanks to Infineon CoolSiC™ monolithically integrated body diode, showing a switching

Benefits

Simplifies design-in and enables
product to be operated as normally
off device

Extremely low and temperature
independent switching losses

Reduced conduction losses with
respect to IGBT mainly at partial and
at light load

Low power losses in reverse operation
in combination with synchronous
rectification, reduced footprint

Enables either reduced cooling
requirements, the adoption of higher
operating frequencies resulting in
system costs savings by shrinking
passive components or reaching a
higher power density design in
same footprint

Utmost reliability

performance comparable with that of an external SiC Schottky barrier diode. The Infineon CoolSiC™,

High quality knowhow and capacity in
SiC devices

with its ultrafast body diode and dedicated Driver IC, represents the best solution for solar, UPS and
industrial drives applications by combining best performance, reliability, safety and ease of use.
Direct measurements in a Three-phase string Inverter (sunny tripower by SMA Solar Technology AG)
Pout max 17kW fsw=16kHz 1)
99.0
98.5
Eciency [%]

98.0
97.5
97.0
96.5
96.0

Si IGBT
SiC JFET

95.5
95.0
94.5
94.0

5

15

25

35

45

55

65

75

85

95

Measured system
efficiencies at optimum
operation point

Output Power [% nominal]

Measured system efficiencies
at several DC link voltages
(400V up to 800V)
1)

G. Deboy, H. Ludwig, R. Mallwitz, R. Rupp, „New SiC JFET” with Integrated Body Diode Boosts Performance of Photovoltaic Systems”
Proc. PCIM, May 2011

www.infineon.com/CoolSiC

Applications

Solar

UPS

Industrial Drives