Schottky Diodes0 pages

IDB06S60C

nd

TM

Product Summary Features V >
DC 600 V Revolutionary semiconductor material - Silicon Carbide
Օ Switching behavior benchmark No reverse recovery/ No forward recoveryՕ No temperature influence on the switching behavior High surge current capability
Օ Pb-free lead plating; RoHS compliant Qualified according to JEDEC Q >
c 15 nC I >
F 6 A D >
2 PAK (PG-TO220-3-45) >
1) for target applicationsՕ Breakdown voltage tested at 5mA >
2) CCM PFC Օ Motor Drives thinQ! 2G Diode designed for fast switching applications like: Maximum ratings, at T Type Package Marking Pin 2 Pin 3 IDB06S60C D >
2 PAK (PG-TO220-3-45) D06S60C C A
Rev. 2.1page 12009-01-07 >
j =25 C, unless otherwise specified ParameterSymbolConditionsUnit Value Continuous forward current I >
F T >
C <135 аC6ARMS forward current I >
F,RMS f =50 Hz9Surge non-repetitive forward current, sine halfwave I >
F,SM T >
C =25 C, t >
p =10 ms46Repetitive peak forward current I T >
j =150 аC, >
F,RM T >
C =100 C, D =0.124Non-repetitive peak forward current I >
F,max T >
C =25 аC, t >
p =10 s210 i ղ t value i >
2 d tT >
2 C =25 C, t >
p =10 ms10A sRepetitive peak reverse voltage V >
RRM 600VDiode ruggedness dv/dtd v/ d t V >
R =0Ѕ480V50V/nsPower dissipation P >
tot T >
C =25 C52WOperating and storage temperature T >
j , T >
stg -55 ... 175аC >