1N5768 Diode Array0 pages

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com

ISOLATED DIODE ARRAY
Qualified per MIL-PRF-19500/474

DEVICES

LEVELS

1N5768

JAN
JANTX
JANTXV

DESCRIPTION
These low capacitance diode arrays with common cathode are multiple, discrete,
isolated junctions fabricated by a planar process and mounted in a 10-PIN
package for use as steering diodes protecting up to eight I/O ports from ESD,
EFT, or surge by directing them to the positive side of the power supply line (see
figure 1). This circuit application is further complimented by the 1N5770
(separate data sheet) that has a common anode. An external TVS diode may be
added between the positive supply line and ground to prevent overvoltage on the
supply rail. They may also be used in fast switching core-driver applications. This
includes computers and peripheral equipment such as magnetic cores, thin-film
memories, plated-wire memories, etc., as well as decoding or encoding
applications. These arrays offer many advantages of integrated circuits such as
high-density packaging and improved reliability. This is a result of fewer pick
and place operations, smaller footprint, smaller weight, and elimination of various
discrete packages that may not be as user friendly in PC board mounting.
IMPORTANT: For the most current data, consult MICROSEMI’s website:
http://www.microsemi.com

10-PIN Ceramic
Flat Pack

FEATURES
Hermetic Ceramic Package
Isolated Diodes to Eliminate Cross-Talk Voltages
High Breakdown Voltage VBR > 60 V at 10 μA
Low Leakage IR< 100nA at 40 V
Low Capacitance C < 4.0 pF
Options for screening in accordance with MIL-PRF-19500/474 for JAN,
JANTX, JANTXV, the prefixes respectively to part numbers.

T4-LDS-0078 Rev. 1 (082463)

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