APT10M11JVRU2 MOSFET Module0 pages

APT10M11JVRU2
ISOTOP® Boost chopper
MOSFET Power Module
K

D

G

S

K

S
D

G

VDSS = 100V
RDSon = 11m max @ Tj = 25°C
ID = 142A @ Tc = 25°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
Features
Power MOS V® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic diode
- Avalanche energy rated
- Very rugged
ISOTOP® Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Very rugged
Low profile
RoHS Compliant

ISOTOP

Absolute maximum ratings

ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
IFAV
IFRMS

Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C

Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Maximum Average Forward Current
Duty cycle=0.5
RMS Forward Current (Square wave, 50% duty)

Tc = 25°C

Tc = 90°C

Max ratings
100
142
106
576
±30
11
450
144
50
2500
30
47

Unit
V
A
V
m
W
A
mJ
A

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

www.microsemi.com

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APT10M11JVRU2 – Rev 2 October, 2012

Symbol
VDSS