483-01 products: 3 Phase Bridge0 pages

483-01 – 483-04

Available

Qualified Level:
JANTX

3 Phase 25 Amp Rectifier Bridge
Qualified per MIL-PRF-19500/483
DESCRIPTION

This series of high-current three-phase bridge rectifiers are constructed with hermetically
sealed rectifiers built with the same design and construction techniques used in military
applications for the upmost in reliability. These include voidless glass encapsulation and
internal "Category 1" metallurgical bonds. They can optionally be purchased built with diodes
that have been screened and mil-qualified to MIL-PRF-19500/483, making them ideal for
applications where failure cannot be tolerated. These 25A rectifier bridges are available with
working peak reverse voltage ratings of 200, 400, 600, or 800 V per leg.

ME Package
Important: For the latest information, visit our website http://www.microsemi.com.

FEATURES
•

Voidless hermetically sealed glass packages used internally for each leg.

•
•
•

Triple-layer passivation.
Internal “Category 1” metallurgical bonds.
JANTX qualification available per MIL-PRF-19500/483.
(See part nomenclature for all available options).

•

RoHS compliant versions available without Sn/Pb solder dip.

APPLICATIONS / BENEFITS
•
•
•
•
•
•
•

Conversion of three phase ac to dc current flow.
Working peak reverse voltages 200 to 800 volts.
Military and other high-reliability applications.
High forward surge current capability.
Low thermal resistance.
Extremely robust construction.
Inherently radiation hard as described in Microsemi MicroNote 050.

MAXIMUM RATINGS @ 25 ºC unless otherwise noted
Parameters/Test Conditions
Junction Temperature
Storage Temperature
Working Peak Reverse Voltage

483-01
483-02
483-03
483-04
Maximum Average DC Output Current @ T C = +55 ºC
Maximum Average DC Output Current @ T C = +100 ºC
Forward Surge Current @ I O = I O1 , T C = +55 ºC, tp = 8.3
ms
Solder Temperature @ 10 s

Symbol
TJ
T STG
V RWM

I O1
(2)
I O2
I F(surge)

Value
-65 to +175
-65 to +150
200
400
600
800
25
18.5
150

T SP

260

(1)

Notes: 1. Derate from 25 A at T C = +55 ºC to 18.5 A at T C = +100 ºC (144 mA dc/ ºC).
2. Derate from 18.5 A at T C = +100 ºC to 0 A at T C = +150 ºC (370 mA dc/ ºC).

RF01118, Rev. A (1/14/13)

©2013 Microsemi Corporation

Unit
ºC
ºC
V (pk)

A
A
A (pk)
o

C

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