LX5516LL Wireless LAN Power Amplifier0 pages

LX5516
InGaP HBT 2.4 - 2.5 GHz Power Amplifier Module

®

TM

P RODUCTION D AT A S HEET

The LX5516 is a power amplifier
module
optimized
for
WLAN
applications
in
the
2.4-2.5GHz
frequency range. The PAM is
implemented as a two-stage monolithic
microwave integrated circuit (MMIC)
with on-chip active bias and 50
impedance matched at both input and
output.
The device is manufactured with an
InGaP/GaAs Heterojunction Bipolar
Transistor
(HBT)
IC
process
(MOCVD). With single low voltage
supply of 3.3V, it delivers 29dB power
gain between 2.4-2.5GHz, at a low
quiescent current of 80mA.

For 18dBm OFDM output power
(64QAM, 54Mbps), the PAM provides a
low EVM (Error-Vector Magnitude) of
2.5%, and consumes 130mA total DC
current.
The LX5516 is available in a 12-pin
2x2mm micro-lead package (MLPQ12L). The compact footprint, ultra low
profile, and thermal capability of the
MLP package make the LX5516 an
ideal solution for high-gain power
amplifier
requirements
for
IEEE
802.11b/g/n applications.

Advanced InGaP HBT
2.4-2.5GHz Operation
Single-Polarity 3.3V Supply
Quiescent Current ~80mA
Power Gain ~ 29 dB
Pout=~+18dBm for 2.5% EVM,
OFDM 64QAM/54Mbps
Total Current ~130mA for Pout=
+18dBm
50 Input/Output Matching
On-chip Output Power Detector
Small Footprint: 2x2mm2
Ultra Low Profile:0.46mm

W WW . Microsemi . CO M

KEY FEATURES

DESCRIPTION

APPLICATIONS
IEEE 802.11b/g/n

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

BLOCK DIAGRAM
Vc
RF
Input

RF

Output
Match

Input
Match
RF

Output

Active Bias Network

Vcc

Vref

Det

2X2MM MLP PACKAGE

PACKAGE ORDER INFO

LL

LX5516
LX5516

Plastic MLPQ
12 pin 2x2mm
LX5516LL

Note: Available in Tape & Reel. Append the letters
“TR” to the part number. (i.e. LX5516LL-TR)
Copyright © 2008
Rev 1.0, 2008-12-16

Microsemi
Analog Mixed Signal Group
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

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