PTC080M3B0 pages

PTC080M3B

Photo Transistor
2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25 )
CONDITIONS
ITEM
SYMBOL
Collector Emitter Current
Icel Vce=10V,Ee=0.5mw/cm2
Collector Dark Current
Iceo Vce=10V,Ee=0mw/cm2
C-E Saturation Voltage
VCE(sat) Ic=0.2mA,Ee=5mw/cm2
Spectral sensitivity
Peak Sensitivity Wave Length
p
Tr
RL=100 ,Vce=5V,Ic=0.5mA
Switching time (Rise Time)
Tf
RL=100 ,Vce=5V,Ic=0.5mA
Switching time (Fall Time)
Angular Response
Color Temperature=2870°K Standard Tungsten Lump

High Reliability
Compact
APPLICATIONS Optical Switches
Optical Sensors
Optical Detectors

OPTRANS

TYP
1.0

MAX
100

0.2
400

1100

880
10.0
10.0
±80

UNIT
mA
nA
V
nm
nm
S
S
deg

Emitter
Collector
Dimensions (Unit:mm)

FEATURES

1. ABSOLUTE MAXIMUM RATINGS (Ta=25 )
ITEM
SYMBOL
Collector-Emitter Voltage
Vceo
Emitter-Collector Voltage
Veco
Collector Current
Ic
Collector Power Dissipation
Pc
Topr
Operating Temp.
Tstg
Storage Temp.
Junction Temp.
Tj
Lead Soldering Temp.*
Tls
*Time 5 Sec max,Position:Up to 3mm from the body

MIN

RATINGS
20
5
30
80

UNIT
V
V
mA
mW

-25 TO 85
-30 TO 100

100
260

2-6-11 MASUKATA,TAMA-KU, KAWASAKI 214-0032.JAPAN
TEL.81(44)932-6491 / FAX.81(44)932-8281
E-male optrans@mb.kcom.ne.jp

2000/10/24 053-PTC080M3B