Visible Light Emitting Diodes0 pages

VSF472C1-CD Visible Light Emitting Diode
2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25Ž)
SYMBOL MIN TYP MAX UNIT
Iv 300 mcd
VF 3.5 4.0 V
IR 100 ìA
ëp 468 nm
Äë 35 nm
è ±40 deg.
Tr | nS
Tf | nS
Cj 40 pF
I/T -0.5 %/Ž
V/T -3.0 mV/Ž
‡@ Anode ‡A Cathode
FEATURES ¥High Luminous Intensity
¥Colored/Diffused Epoxy Lens
¥Wide Illumination
¥Compact
APPLICATIONS ¥Displays
¥Indicators
¥Decorations
1. ABSOLUTE MAXIMUM RATINGS (Ta=25Ž)
SYMBOL UNIT
IF mA
IFP A
VR V
PD mW
Topr Ž
Tstg Ž
Tj Ž
Tls Ž
*2:Time 5 Sec max,Position:Up to 3mm from the body
Temp. Coefficient of VF IF=10mA
Temp. Coefficient of Iv
Reverse Current
Peak Wavelength
Spectral Line Half Width
Half Intensity Beam Angle
Rise Time
Fall Time
Junction Capacitance
I T E M
Luminous Intensity
Forward Voltage
IFP=20mA
CONDITIONS
IF=20mA
IF=20mA
IFP=20mA
IF=10mA
VR=5V
IF=20mA
IF=20mA
IF=20mA
1MHz ,V=0V
I T E M
Forward Current (DC)
Forward Current (Pulse)*1
Reverse Voltage
Power Dissipation
Operating Temp.
Storage Temp.
Junction Temp.
5
120
-20 TO 80
-30 TO 100
RATINGS
Dimensions (Unit:mm)
30
0.3
100
Lead Soldering Temp.*2 260
*1:Tw=10uS,T=10mS
THERMAL DERATING CURVE
0
10
20
30
40
-30 0 30 60 90
AMBIENT TEMPERATURE(Ž)
FORWARD CURRENT(mA)
FORWARD I-V CHARACTERISTICS
0
10
20
30
40
0 1 2 3 4
FORWARD VOLTAGE(V)
FORWARD CURRENT(mA)
LUMINOUS INTENSITY vs
TEMPERATURE
IF=10mA
0
20
40
60
80
100
120
140
-30 0 30 60 90
AMBIENT TEMPERATURE(Ž)
LUMINOUS INTENSITY(%)
SPECTRAL OUTPUT
0
20
40
60
80
100
120
370 470 570
WAVELENGTH(nm)
RELATIVE POWER OUTPUT(%)
RADIATION PATTERN
0
20
40
60
80
100
120
-90 -60 -30 0 30 60 90
BEAM ANGLE(deg.)
RELATIVE POWER OUTPUT(%)
RELATIVE POWER vs FORWARD
CURRENT
0
50
100
150
200
0 10 20 30 40
FORWARD CURRENT(mA)
RELATIVE POWER OUTPUT(%)
FORWARD VOLTAGE vs
TEMPERATURE
IF=10mA
1
1.5
2
2.5
3
3.5
4
-30 0 30 60 90
AMBIENT TEMPERATURE(Ž)
FORWARD VOLTAGE(V)
OPTRANS 2-6-11 MASUKATA,TAMA-KU, KAWASAKI 214-0032.JAPAN
TEL.81(44)932-6491 / FAX.81(44)932-8281
E-male optrans@mb.kcom.ne.jp
2000/10/24 088-VSF472C1-CD