Photo Diodes0 pages

PD061PT Photo Diode
2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25Ž)
SYMBOL MIN TYP MAX UNIT
Voc 0.35 V
Light Current IL VR=10V,Ee=5mW/cm2¦ 10 ìA
ID 10 nA
CF 0.55 |
ë nm
ëp 880 nm
Tr 6 nS
Tf 6 nS
è ±10 deg
Cj 5 10 pF
‡@ Anode ‡A Cathode
FEATURES ¥Linearity of Ee vs IL Dimensions (Unit:mm)
¥Low Dark Current
¥Narrow Angular Response
¥High Reliability in Demanding Environments (Metal Can Package)
APPLICATIONS ¥Optical Switches
¥Edge Sensing
¥Fiber Optical Communications
¥Smoke Detectors
1. ABSOLUTE MAXIMUM RATINGS (Ta=25Ž)
SYMBOL UNIT
VR V
PD mW
Topr Ž
Tstg Ž
Tj Ž
Tls Ž
*1:Time 5 Sec max,Position:Up to 3mm from the body
Lead Soldering Temp.*1
RATINGS
30
100
-30 TO 100
-40 TO 125
125
260
Operating Temp.
400`1100
Junction Temp.
I T E M
Reverse Voltage
Switching time (Fall Time) R=1000Ù,Vr=10V
Angular Response
at 1MHz ,V=5V
¦ Color Temperature=2870°K Standard Tungsten Lump
CONDITIONS
Ee=5mW/cm2 ¦
Storage Temp.
Junction Capacitance
Spectral Sensitivity
Peak Sensitivity Wave Length
Switching time (Rise Time)
I T E M
Open Circuit Voltage
Power Dissipation
Ee=5mW/cm2 ¦
R=1000Ù,Vr=10V
Dark Current VR=10V
Curve Factor
THERMAL DERATING CURVE
0
20
40
60
80
100
120
-30 -10 10 30 50 70 90 110
AMBIENT TEMPERATURE(Ž)
POWER DISSIPATION(mW)
CAPACITANCE vs REVERSE
VOLTAGE
0
5
10
15
20
0 5 10 15 20
REVERSE VOLTAGE(V)
CAPACITANCE(pF)
RESPONSIVITY
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
400 500 600 700 800 900 1000 1100 1200
WAVELENGTH(nm)
RESPONSIVITY(A/W)
ANGULAR DISPLACEMENT
0
20
40
60
80
100
120
-30 -20 -10 0 10 20 30
ANGULAR DISPLACEMENT(deg.)
RELATIVE LIGHT CURRENT(%)
LIGHT CURRENT vs IRRADIANCE
0
5
10
15
20
25
0 5 10
IRRADIANCE(mW/cm2)
LIGHT CURRENT(ìA)
OPTRANS 2-6-11 MASUKATA,TAMA-KU, KAWASAKI 214-0032.JAPAN
TEL.81(44)932-6491 / FAX.81(44)932-8281
E-male optrans@mb.kcom.ne.jp
2000/10/24 050-PD061PT