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LSF811C1 Infrared Emitting Diode
2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25Ž)
SYMBOL MIN TYP MAX UNIT
PO 6.5 mW
VF 1.4 1.9 V
IR 100 ìA
ëp 810 nm
Äë 30 nm
è ±25 deg.
Tr | nS
Tf | nS
Cj 60 pF
P/T -0.6 %/Ž
V/T -2.0 mV/Ž
‡@ Anode ‡A Cathode
FEATURES ¥High-output Power
¥Compact
¥High Reliability
APPLICATIONS ¥Optical Switches
¥Optical Sensors
¥Medical Application
1. ABSOLUTE MAXIMUM RATINGS (Ta=25Ž)
SYMBOL UNIT
IF mA
IFP A
VR V
PD mW
Topr Ž
Tstg Ž
Tj Ž
Tls Ž
*2:Time 5 Sec max,Position:Up to 3mm from the body
100
Lead Soldering Temp.*2 260
*1:Tw=10uS,T=10mS
RATINGS
Dimensions (Unit:mm)
60
0.5
5
120
-20 TO 85
-30 TO 100
Power Dissipation
Operating Temp.
Storage Temp.
Junction Temp.
I T E M
Forward Current (DC)
Forward Current (Pulse)*1
Reverse Voltage
CONDITIONS
IF=20mA
IF=20mA
VR=5V
IF=20mA
IF=20mA
IF=20mA
IFP=50mA
IFP=50mA
1MHz ,V=0V
IF=10mA
IF=10mA
I T E M
Power Output
Forward Voltage
Reverse Current
Temp. Coefficient of VF
Peak Wavelength
Spectral Line Half Width
Half Intensity Beam Angle
Rise Time
Fall Time
Junction Capacitance
Temp. Coefficient of PO
THERMAL DERATING CURVE
0
10
20
30
40
50
60
70
80
-30 0 30 60 90
AMBIENT TEMPERATURE(Ž)
FORWARD CURRENT(mA)
FORWARD I-V CHARACTERISTICS
0
10
20
30
40
50
60
70
80
0 1 2 3
FORWARD VOLTAGE(V)
FORWARD CURRENT(mA)
POWER OUTPUT vs TEMPERATURE
IF=10mA
0
20
40
60
80
100
120
140
-30 0 30 60 90
AMBIENT TEMPERATURE(Ž)
RELATIVE POWER OUTPUT(%)
SPECTRAL OUTPUT
0
20
40
60
80
100
120
710 810 910
WAVELENGTH(nm)
RELATIVE POWER OUTPUT(%)
RADIATION PATTERN
0
20
40
60
80
100
120
-90 -60 -30 0 30 60 90
BEAM ANGLE(deg.)
RELATIVE POWER OUTPUT(%)
RELATIVE POWER vs FORWARD
CURRENT
0
50
100
150
200
250
300
350
400
0 20 40 60 80
FORWARD CURRENT(mA)
RELATIVE POWER OUTPUT(%)
FORWARD VOLTAGE vs
TEMPERATURE
IF=10mA
1
1.1
1.2
1.3
1.4
1.5
1.6
-30 0 30 60 90
AMBIENT TEMPERATURE(Ž)
FORWARD VOLTAGE(V)
OPTRANS 2-6-11 MASUKATA,TAMA-KU, KAWASAKI 214-0032.JAPAN
TEL.81(44)932-6491 / FAX.81(44)932-8281
E-male optrans@mb.kcom.ne.jp
2000/10/24 220-LSF811C1