LS872NJ20 pages

LS872NJ2

Infrared Emitting Diode
2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25 )
ITEM
CONDITIONS
SYMBOL
Power Output
IF=50mA
PO
Forward Voltage
IF=50mA
VF
Reverse Current
VR=5V
IR
Peak Wavelength
p IF=50mA
Spectral Line Half Width
IF=50mA
Half Intensity Beam Angle
IF=50mA
fc
Cut-Off Frequency
IFP=50mA ±10mAp-p
Junction Capacitance
1MHz ,V=0V
Cj
Temp. Coefficient of PO
IF=10mA
P/T
Temp. Coefficient of VF
IF=10mA
V/T

High-output Power
Parallel Rays (Excellent)
High Reliability in Demanding Environments
APPLICATIONS Optical Switches
Linear & Rotary Encoder
FEATURES

1. ABSOLUTE MAXIMUM RATINGS (Ta=25 )
ITEM
RATINGS
SYMBOL
Forward Current (DC)
100
IF
Forward Current (Pulse)*1
1
IFP
Reverse Voltage
5
VR
Power Dissipation
200
PD
Topr
Operating Temp.
-30 TO 100
Tstg
Storage Temp.
-40 TO 125
Junction Temp.
125
Tj
Lead Soldering Temp.*2
260
Tls
*1:Tw=10uS,T=10mS
*2:Time 5 Sec max,Position:Up to 3mm from the body

OPTRANS

MIN

TYP
6.5
1.55

MAX

870
45
±4
12.0
50
-0.3
-2.1

2.0
10

UNIT
mW
V
A
nm
nm
deg.
MHz
pF
%/
mV/

Dimensions (Unit:mm)

UNIT
mA
A
V
mW

2-6-11 MASUKATA,TAMA-KU, KAWASAKI 214-0032.JAPAN
TEL.81(44)932-6491 / FAX.81(44)932-8281
E-male optrans@mb.kcom.ne.jp

2000/10/24

029-LS872NJ2