Infrared Emitting Diodes0 pages

LSF872S1 Infrared Emitting Diode
2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25Ž)
SYMBOL MIN TYP MAX UNIT
PO 12.0 16.0 mW
VF 1.55 2.0 V
IR 10 ìA
ëp 870 nm
Äë 45 nm
è ±12 deg.
fc 12.0 MHz
Cj 50 pF
P/T -0.3 %/Ž
V/T -2.1 mV/Ž
‡@ Anode ‡A Cathode
FEATURES ¥High-output Power
¥Narrow Beam Angle
¥High Reliability
APPLICATIONS ¥Optical Switches
¥Bar-code Reader
1. ABSOLUTE MAXIMUM RATINGS (Ta=25Ž)
SYMBOL UNIT
IF mA
IFP A
VR V
PD mW
Topr Ž
Tstg Ž
Tj Ž
Tls Ž
*2:Time 5 Sec max,Position:Up to 3mm from the body
Temp. Coefficient of VF IF=10mA
100
1.0
RATINGS
Dimensions (Unit:mm)
Temp. Coefficient of PO
Reverse Current
Peak Wavelength
Spectral Line Half Width
Half Intensity Beam Angle
Cut-Off Frequency
Junction Capacitance
I T E M
Power Output
Forward Voltage
IFP=50mA ±10mAp-p
CONDITIONS
IF=50mA
IF=50mA
1MHz ,V=0V
IF=10mA
VR=5V
IF=50mA
IF=50mA
IF=50mA
I T E M
Forward Current (DC)
Forward Current (Pulse)*1
Reverse Voltage
Power Dissipation
Operating Temp.
Storage Temp.
Junction Temp.
5
180
-20 TO 80
-30 TO 100
100
Lead Soldering Temp.*2 260
*1:Tw=10uS,T=10mS
THERMAL DERATING CURVE
0
20
40
60
80
100
120
-30 0 30 60 90
AMBIENT TEMPERATURE(Ž)
FORWARD CURRENT(mA)
FORWARD I-V CHARACTERISTICS
0
20
40
60
80
100
120
0 1 2 3
FORWARD VOLTAGE(V)
FORWARD CURRENT(mA)
POWER OUTPUT vs TEMPERATURE
IF=10mA
0
20
40
60
80
100
120
140
-30 0 30 60 90
AMBIENT TEMPERATURE(Ž)
RELATIVE POWER OUTPUT(%)
SPECTRAL OUTPUT
0
20
40
60
80
100
120
770 870 970
WAVELENGTH(nm)
RELATIVE POWER OUTPUT(%)
RADIATION PATTERN
0
20
40
60
80
100
120
-90 -60 -30 0 30 60 90
BEAM ANGLE(deg.)
RELATIVE POWER OUTPUT(%)
RELATIVE POWER vs FORWARD
CURRENT
0
50
100
150
200
250
0 25 50 75 100 125
FORWARD CURRENT(mA)
RELATIVE POWER OUTPUT(%)
FORWARD VOLTAGE vs
TEMPERATURE
IF=10mA
1
1.1
1.2
1.3
1.4
1.5
1.6
-30 0 30 60 90
AMBIENT TEMPERATURE(Ž)
FORWARD VOLTAGE(V)
OPTRANS 2-6-11 MASUKATA,TAMA-KU, KAWASAKI 214-0032.JAPAN
TEL.81(44)932-6491 / FAX.81(44)932-8281
E-male optrans@mb.kcom.ne.jp
2000/10/23 016-LSF872S1