LS880M20 pages

LS880M2

Infrared Emitting Diode
2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25 )
CONDITIONS
ITEM
SYMBOL
IF=50mA
Power Output
PO
IF=50mA
Forward Voltage
VF
VR=5V
Reverse Current
IR
Peak Wavelength
p IF=50mA
IF=50mA
Spectral Line Half Width
IF=50mA
Half Intensity Beam Angle
IFP=50mA
Rise Time
Tr
IFP=50mA
Fall Time
Tf
1MHz ,V=0V
Junction Capacitance
Cj
IF=10mA
Temp. Coefficient of PO
P/T
IF=10mA
Temp. Coefficient of VF
V/T

FEATURES

APPLICATIONS

TYP
13.0
1.45
880
60
±90
1.5
0.8
15
-0.5
-1.5

MAX
1.8
10

UNIT
mW
V
A
nm
nm
deg.
S
S
pF
%/
mV/

Anode
Cathode
Dimensions (Unit:mm)

High-output Power
Wide Beam Angle
High Reliability
Optical Switches
Optical Sensors

1. ABSOLUTE MAXIMUM RATINGS (Ta=25 )
ITEM
RATINGS
SYMBOL
Forward Current (DC)
100
IF
Forward Current (Pulse)*1
1
IFP
Reverse Voltage
5
VR
Power Dissipation
180
PD
Topr
Operating Temp.
-20 TO 80
Tstg
Storage Temp.
-30 TO 100
Junction Temp.
100
Tj
Lead Soldering Temp.*2
260
Tls
*1:Tw=10uS,T=10mS
*2:Time 5 Sec max,Position:Up to 3mm from the body

OPTRANS

MIN
7.0

UNIT
mA
A
V
mW

2-6-11 MASUKATA,TAMA-KU, KAWASAKI 214-0032.JAPAN
TEL.81(44)932-6491 / FAX.81(44)932-8281
E-male optrans@mb.kcom.ne.jp

2000/10/24 023-LS880M2.xls