LSC880M3A0 pages
LSC880M3A
Infrared Emitting Diode
2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25 )
ITEM
CONDITIONS
SYMBOL
Power Output
IF=20mA
PO
Forward Voltage
IF=20mA
VF
Reverse Current
VR=5V
IR
Peak Wavelength
p IF=20mA
Spectral Line Half Width
IF=20mA
Half Intensity Beam Angle
IF=20mA
Rise Time
IFP=50mA
Tr
Fall Time
IFP=50mA
Tf
Junction Capacitance
1MHz ,V=0V
Cj
Temp. Coefficient of PO
IF=10mA
P/T
Temp. Coefficient of VF
IF=10mA
V/T
TYP
4.5
1.3
880
60
±80
1.5
0.8
15
-0.5
-1.5
MAX
UNIT
mW
1.6
V
A
10
nm
nm
deg.
S
S
pF
%/
mV/
Cathode
Anode
Dimensions (Unit:mm)
High-output Power
Compact
High Reliability
APPLICATIONS Optical Switches
Optical Sensors
FEATURES
1. ABSOLUTE MAXIMUM RATINGS (Ta=25 )
ITEM
RATINGS
SYMBOL
Forward Current (DC)
50
IF
Forward Current (Pulse)*1
0.5
IFP
Reverse Voltage
5
VR
Power Dissipation
100
PD
Topr
Operating Temp.
-20 TO 85
Tstg
Storage Temp.
-30 TO 100
Junction Temp.
100
Tj
Lead Soldering Temp.*2
260
Tls
*1:Tw=10uS,T=10mS
*2:Time 5 Sec max,Position:Up to 3mm from the body
OPTRANS
MIN
UNIT
mA
A
V
mW
2-6-11 MASUKATA,TAMA-KU, KAWASAKI 214-0032.JAPAN
TEL.81(44)932-6491 / FAX.81(44)932-8281
E-male optrans@mb.kcom.ne.jp
2000/10/23 001-LSC880M3A
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