VSF665N5-J0 pages

VSF665N5-J

Visible Light Emitting Diode
2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25 )
CONDITIONS
ITEM
SYMBOL
IF=20mA
Power Output
PO
IF=20mA
Luminous Intensity
Iv
IF=20mA
Forward Voltage
VF
VR=5V
Reverse Current
IR
Peak Wavelength
p IF=20mA
IF=20mA
Spectral Line Half Width
IF=20mA
Half Intensity Beam Angle
IFP=20mA
Rise Time
Tr
IFP=20mA
Fall Time
Tf
1MHz ,V=0V
Junction Capacitance
Cj
IF=10mA
Temp. Coefficient of Iv
I/T
Temp. Coefficient of VF
IF=10mA
V/T

High Output Power
High Luminous Intensity
Narrow Beam Angle
High Reliability
APPLICATIONS Optical Sensor
Bar-code Reader
Edge Sensing (Coin Dispenser)
Indicators
1. ABSOLUTE MAXIMUM RATINGS (Ta=25 )
RATINGS
ITEM
SYMBOL
Forward Current (DC)
50
IF
Forward Current (Pulse)*1
0.5
IFP
Reverse Voltage
5
VR
Power Dissipation
120
PD
Topr
Operating Temp.
-20 TO 80
Tstg
Storage Temp.
-30 TO 100
Junction Temp.
100
Tj
Lead Soldering Temp.*2
260
Tls
*1:Tw=10uS,T=10mS
*2:Time 3 Sec max,Position:Up to 2mm from the body

TYP
6.5
3000
1.8
660
25
±7
30
30
20
-0.5
-1.5

MAX

2.2
100

UNIT
mW
mcd
V
A
nm
nm
deg.
nS
nS
pF
%/
mV/

Anode
Cathode
Dimensions (Unit:mm)

FEATURES

OPTRANS

MIN
5.0
1200

UNIT
mA
A
V
mW

2-6-11 MASUKATA,TAMA-KU, KAWASAKI 214-0032.JAPAN
TEL.81(44)932-6491 / FAX.81(44)932-8281
E-male optrans@mb.kcom.ne.jp

2000/10/24 204-VSF665N5-J